| PART |
Description |
Maker |
| FDV302PNL |
Digital FET,P-Channel 120 mA, 25 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Fairchild Semiconductor, Corp.
|
| FDV301N FDV301NNL |
N-Channel,Digital FET
Digital FET , N-Channel
|
Fairchild Semiconductor
|
| FDV302 FDV302P |
Digital FET/ P-Channel
Digital FET, P-Channel
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDG6301N09 FDG6301N-F085 |
Dual N-Channel, Digital FET
|
Fairchild Semiconductor
|
| FDC6301N01 FDC6301NNL FDC6301NQ |
Dual N-Channel, Digital FET
Dual N-Channel , Digital FET
|
Fairchild Semiconductor
http://
|
| FDG6304 FDG6304P |
Dual P-Channel, Digital FET P沟道，数字场效应
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 2SJ358 2SJ358-T1 2SJ358-T2 2SJ358-AZ TC-2491 |
From old datasheet system
P-channel MOS FET (-60V, -3A)
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| 3SK309 |
Silicon N Channel MOS FET
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
|
Hitachi Semiconductor
|
| MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET™ High Energy Power FET
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| 2SK435 2SK435E |
Silicon N Channel MOS FET
Silicon N-Channel Junction FET
TRANSISTOR | JFET | N-CHANNEL | 22V V(BR)DSS | 40MA I(DSS) | TO-92
|
Hitachi Semiconductor
|
| PMGD290XN PMGD290XN115 GD290XN115 |
Dual N-channel mTrenchMOS extremely low level FET
From old datasheet system
Dual N-channel uTrenchmos (tm) extremely low level FET 860 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
